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| microwave power gaas fet microwave semiconductor TIM1414-8l technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at pout= 28.0dbm g1db=5.0 db at 14.0 ghz to 14.5 ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=39.5 dbm at 14.0 ghz to 14.5 ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 38.5 39.5 ? power gain at 1db gain compression point g 1db db 4.0 5.0 ? drain current i ds1 a ? 3.4 4.4 power added efficiency add vds= 9v f= 14.0 to 14.5ghz % ? 20 ? 3 rd order intermodulation distortion im3 dbc -42 -45 ? drain current ids2 two-tone test po=28. 0dbm (single carrier level) a ? 3.4 4.4 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 80 recommended gate resistance(rg) : rg= 150 ? (max.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 4.0 a ms ? 2400 ? pinch-off voltage v gsoff v ds = 3v i ds = 120ma v -2.0 -3.5 -5.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 8.0 ? gate-source breakdown voltage v gso i gs = -120 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 1.6 2.5 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jul. 2006
TIM1414-8l absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 10.4 total power dissipation (tc= 25 c) p t w 60 channel temperature t ch c 175 s torage temperature t stg c -65 to +175 package outline (2-11c1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 2 TIM1414-8l rf performance output power (pout) vs. frequency vds=9v ids ? 3.4a pin=34.5 dbm frequency(ghz) output power(pout) vs. input power(pin) 3 freq.=14.5ghz vds=9v ids ? 3.4a pout add 14.0 14.25 14.5 41 40 39 38 37 pout(dbm) 42 41 40 39 38 37 36 35 34 33 40 30 20 10 0 pout(dbm) add(%) 27 29 31 33 35 37 pin(dbm) TIM1414-8l power dissipation(pt) vs. case temperature(tc) 4 0 40 80 120 160 200 pt(w) 60 30 0 tc( c ) im3 vs. output po wer characteristics vds=9v freq.=14.5ghz f=5mhz 23 -10 -20 -30 -40 -50 -60 im3(dbc) 25 27 29 31 33 pout(dbm) @single carrier level |
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